Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space terrestrial applications. However, recent demonstrations ultra fast growth rates ($\sim$ 500 $\mu$m/h) via uncracked hydrides are not well described by present models growth. Therefore, it necessary to understand kinetics process its coupling with transport phenomena, so as enable uniform epitaxial In this work, we derive kinetic model using experimental data integrate into computational fluid dynamics simulation an HVPE reactor. We also modify existing hydride cracking validate against numerical simulations data. show developed improved able reproduce measurements \ce{GaAs} system.